Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis

As high-level equipment and advanced technologies continue toward sophistication, ultrasonic technology is extensively used in the polishing process of difficult-to-process materials to achieve efficiently smooth surfaces with nanometer roughness. The silicon carbide, an indispensable difficult-to-machine optical material, extremely challenging due its high hardness good wear resistance. To overcome current carbide (SiC) (UP) deficiencies strengthen competitiveness UP industry, multi-objective optimization based on Taguchi–GRA method for SiC ceramic obtain optimal parameter combination a vital urgently demanded task. orthogonal experiment, analysis variance, grey relational (GRA), validation were performed optimize schemes. For single objective roughness removal rate, influence degree abrasive size > preloading force content spindle speed feed rate content, respectively. Moreover, integrating these two objectives 14 wt%, 2.5 μm, 80 N, 8000 rpm, 1 mm/s. optimized workpiece surface morphology better, are increased by 7.14% 28.34%, respectively, compared best group. provides more scientific approach evaluating comprehensive performance polishing. parameters have essential relevance materials.